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MDF11N60BTH Transistor - N-MOSFET 600V 11A (TO220F) RETUR Med BFB 2000 kan du

SKU: 44615599301

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Description

Med BFB 2000 kan du skråbore

Real-time video-analytics

Elektriske specifikationer Prøvespænding: leder/leder 500 V leder/skærm 2000 V Driftspænding max 225 V Isolationsmodstand 100 Mohm x km Ledermodstand - (sløjfe) = 78

når der registreres tilstedeværelse i mørket

En indbygget løsning

MDF11N60BTH Transistor - N-MOSFET 600V 11A (TO220F) RETUR Med BFB 2000 kan duHjspndings N kanal MOSFET med lav on state modstand og en hurtig tilkobling. Tekniske detaljer: Kanaltype: N Drain strm kontinuerlig maks.: 11 A Drain source spnding: 600 V Drain source modstand maks.: 550 mOhm Maks. trskelspnding for port: 5V Gate source spnding maks.: 30 V, +30 V Hus: TO220F Elektrisk montage: Printhul Benantal: 3 Transistorkonfiguration: Enkelt Kanalform: Enhancement Effektafsttelse maks.: 49 W Operationel temperatur: 55 +150C Tnd

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
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